Observation of superconducting diode effect

Fuyuki Ando, Yuta Miyasaka, Tian Li, Jun Ishizuka, Tomonori Arakawa, Yoichi Shiota, Takahiro Moriyama, Youichi Yanase and Teruo Ono ()
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Fuyuki Ando: Kyoto University
Yuta Miyasaka: Kyoto University
Tian Li: Kyoto University
Jun Ishizuka: Graduate School of Science, Kyoto University
Tomonori Arakawa: Osaka University
Yoichi Shiota: Kyoto University
Takahiro Moriyama: Kyoto University
Youichi Yanase: Graduate School of Science, Kyoto University
Teruo Ono: Kyoto University

Nature, 2020, vol. 584, issue 7821, 373-376

Abstract: Abstract Nonlinear optical and electrical effects associated with a lack of spatial inversion symmetry allow direction-selective propagation and transport of quantum particles, such as photons1 and electrons2–9. The most common example of such nonreciprocal phenomena is a semiconductor diode with a p–n junction, with a low resistance in one direction and a high resistance in the other. Although the diode effect forms the basis of numerous electronic components, such as rectifiers, alternating–direct-current converters and photodetectors, it introduces an inevitable energy loss due to the finite resistance. Therefore, a worthwhile goal is to realize a superconducting diode that has zero resistance in only one direction. Here we demonstrate a magnetically controllable superconducting diode in an artificial superlattice [Nb/V/Ta]n without a centre of inversion. The nonreciprocal resistance versus current curve at the superconducting-to-normal transition was clearly observed by a direct-current measurement, and the difference of the critical current is considered to be related to the magnetochiral anisotropy caused by breaking of the spatial-inversion and time-reversal symmetries10–13. Owing to the nonreciprocal critical current, the [Nb/V/Ta]n superlattice exhibits zero resistance in only one direction. This superconducting diode effect enables phase-coherent and direction-selective charge transport, paving the way for the construction of non-dissipative electronic circuits.

Date: 2020
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DOI: 10.1038/s41586-020-2590-4

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