Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors

Junho Seo, Chandan De, Hyunsoo Ha, Ji Eun Lee, Sungyu Park, Joonbum Park, Yurii Skourski, Eun Sang Choi, Bongjae Kim, Gil Young Cho, Han Woong Yeom, Sang-Wook Cheong, Jae Hoon Kim (), Bohm-Jung Yang (), Kyoo Kim () and Jun Sung Kim ()
Additional contact information
Junho Seo: Institute for Basic Science (IBS)
Chandan De: Institute for Basic Science (IBS)
Hyunsoo Ha: Seoul National University
Ji Eun Lee: Yonsei University
Sungyu Park: Institute for Basic Science (IBS)
Joonbum Park: Helmholtz-Zentrum Dresden-Rossendorf
Yurii Skourski: Helmholtz-Zentrum Dresden-Rossendorf
Eun Sang Choi: Florida State University
Bongjae Kim: Kunsan National University
Gil Young Cho: Institute for Basic Science (IBS)
Han Woong Yeom: Institute for Basic Science (IBS)
Sang-Wook Cheong: Pohang Accelerator Laboratory
Jae Hoon Kim: Yonsei University
Bohm-Jung Yang: Seoul National University
Kyoo Kim: Korea Atomic Energy Research Institute (KAERI)
Jun Sung Kim: Institute for Basic Science (IBS)

Nature, 2021, vol. 599, issue 7886, 576-581

Abstract: Abstract Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3–10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.

Date: 2021
References: Add references at CitEc
Citations: View citations in EconPapers (4)

Downloads: (external link)
https://www.nature.com/articles/s41586-021-04028-7 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:599:y:2021:i:7886:d:10.1038_s41586-021-04028-7

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/s41586-021-04028-7

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().