High-density switchable skyrmion-like polar nanodomains integrated on silicon

Lu Han, Christopher Addiego, Sergei Prokhorenko, Meiyu Wang, Hanyu Fu, Yousra Nahas, Xingxu Yan, Songhua Cai, Tianqi Wei, Yanhan Fang, Huazhan Liu, Dianxiang Ji, Wei Guo, Zhengbin Gu, Yurong Yang, Peng Wang, Laurent Bellaiche, Yanfeng Chen, Di Wu (), Yuefeng Nie () and Xiaoqing Pan ()
Additional contact information
Lu Han: Nanjing University
Christopher Addiego: University of California
Sergei Prokhorenko: University of Arkansas
Meiyu Wang: Nanjing University
Hanyu Fu: Nanjing University
Yousra Nahas: University of Arkansas
Xingxu Yan: University of California
Songhua Cai: The Hong Kong Polytechnic University
Tianqi Wei: Nanjing University
Yanhan Fang: Nanjing University
Huazhan Liu: Nanjing University
Dianxiang Ji: The Hong Kong Polytechnic University
Wei Guo: Nanjing University
Zhengbin Gu: Nanjing University
Yurong Yang: Nanjing University
Peng Wang: Nanjing University
Laurent Bellaiche: University of Arkansas
Yanfeng Chen: Nanjing University
Di Wu: Nanjing University
Yuefeng Nie: Nanjing University
Xiaoqing Pan: University of California

Nature, 2022, vol. 603, issue 7899, 63-67

Abstract: Abstract Topological domains in ferroelectrics1–5 have received much attention recently owing to their novel functionalities and potential applications6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.

Date: 2022
References: Add references at CitEc
Citations: View citations in EconPapers (13)

Downloads: (external link)
https://www.nature.com/articles/s41586-021-04338-w Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:603:y:2022:i:7899:d:10.1038_s41586-021-04338-w

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/s41586-021-04338-w

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().