Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Lei Liu, Taotao Li (), Liang Ma (), Weisheng Li, Si Gao, Wenjie Sun, Ruikang Dong, Xilu Zou, Dongxu Fan, Liangwei Shao, Chenyi Gu, Ningxuan Dai, Zhihao Yu, Xiaoqing Chen, Xuecou Tu, Yuefeng Nie, Peng Wang, Jinlan Wang (), Yi Shi and Xinran Wang ()
Additional contact information
Lei Liu: Nanjing University
Taotao Li: Nanjing University
Liang Ma: Southeast University
Weisheng Li: Nanjing University
Si Gao: Nanjing University
Wenjie Sun: Nanjing University
Ruikang Dong: Southeast University
Xilu Zou: Nanjing University
Dongxu Fan: Nanjing University
Liangwei Shao: Nanjing University
Chenyi Gu: Nanjing University
Ningxuan Dai: Nanjing University
Zhihao Yu: Nanjing University of Posts and Telecommunications
Xiaoqing Chen: Northwestern Polytechnical University
Xuecou Tu: Nanjing University
Yuefeng Nie: Nanjing University
Peng Wang: Nanjing University
Jinlan Wang: Southeast University
Yi Shi: Nanjing University
Xinran Wang: Nanjing University

Nature, 2022, vol. 605, issue 7908, 69-75

Abstract: Abstract Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon electronics1,2. It has been suggested that bilayer TMDs, which combine good electrostatic control, smaller bandgap and higher mobility than monolayers, could potentially provide improvements in the energy-delay product of transistors3–5. However, despite advances in the growth of monolayer TMDs6–14, the controlled epitaxial growth of multilayers remains a challenge15. Here we report the uniform nucleation (>99%) of bilayer molybdenum disulfide (MoS2) on c-plane sapphire. In particular, we engineer the atomic terrace height on c-plane sapphire to enable an edge-nucleation mechanism and the coalescence of MoS2 domains into continuous, centimetre-scale films. Fabricated field-effect transistor (FET) devices based on bilayer MoS2 channels show substantial improvements in mobility (up to 122.6 cm2 V−1 s−1) and variation compared with FETs based on monolayer films. Furthermore, short-channel FETs exhibit an on-state current of 1.27 mA μm−1, which exceeds the 2028 roadmap target for high-performance FETs16.

Date: 2022
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DOI: 10.1038/s41586-022-04523-5

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