Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Kyung Yeol Ma, Leining Zhang, Sunghwan Jin, Yan Wang, Seong In Yoon, Hyuntae Hwang, Juseung Oh, Da Sol Jeong, Meihui Wang, Shahana Chatterjee, Gwangwoo Kim, A-Rang Jang, Jieun Yang, Sunmin Ryu, Hu Young Jeong, Rodney S. Ruoff (), Manish Chhowalla (), Feng Ding () and Hyeon Suk Shin ()
Additional contact information
Kyung Yeol Ma: Ulsan National Institute of Science and Technology (UNIST)
Leining Zhang: Institute for Basic Science (IBS)
Sunghwan Jin: Institute for Basic Science (IBS)
Yan Wang: University of Cambridge
Seong In Yoon: Ulsan National Institute of Science and Technology (UNIST)
Hyuntae Hwang: Institute for Basic Science (IBS)
Juseung Oh: Pohang University of Science and Technology (POSTECH)
Da Sol Jeong: Ulsan National Institute of Science and Technology (UNIST)
Meihui Wang: Ulsan National Institute of Science and Technology (UNIST)
Shahana Chatterjee: Institute for Basic Science (IBS)
Gwangwoo Kim: Ulsan National Institute of Science and Technology (UNIST)
A-Rang Jang: Semyung University
Jieun Yang: Kyung Hee University
Sunmin Ryu: Pohang University of Science and Technology (POSTECH)
Hu Young Jeong: Ulsan National Institute of Science and Technology (UNIST)
Rodney S. Ruoff: Ulsan National Institute of Science and Technology (UNIST)
Manish Chhowalla: University of Cambridge
Feng Ding: Institute for Basic Science (IBS)
Hyeon Suk Shin: Ulsan National Institute of Science and Technology (UNIST)

Nature, 2022, vol. 606, issue 7912, 88-93

Abstract: Abstract Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene1–3, hexagonal boron nitride (hBN)4–6 and transition metal dichalcogenides7,8 have been grown. hBN is considered to be the ‘ideal’ dielectric for 2D-materials-based field-effect transistors (FETs), offering the potential for extending Moore’s law9,10. Although hBN thicker than a monolayer is more desirable as substrate for 2D semiconductors11,12, highly uniform and single-crystal multilayer hBN growth has yet to be demonstrated. Here we report the epitaxial growth of wafer-scale single-crystal trilayer hBN by a chemical vapour deposition (CVD) method. Uniformly aligned hBN islands are found to grow on single-crystal Ni (111) at early stage and finally to coalesce into a single-crystal film. Cross-sectional transmission electron microscopy (TEM) results show that a Ni23B6 interlayer is formed (during cooling) between the single-crystal hBN film and Ni substrate by boron dissolution in Ni. There are epitaxial relationships between hBN and Ni23B6 and between Ni23B6 and Ni. We also find that the hBN film acts as a protective layer that remains intact during catalytic evolution of hydrogen, suggesting continuous single-crystal hBN. This hBN transferred onto the SiO2 (300 nm)/Si wafer acts as a dielectric layer to reduce electron doping from the SiO2 substrate in MoS2 FETs. Our results demonstrate high-quality single-crystal multilayered hBN over large areas, which should open up new pathways for making it a ubiquitous substrate for 2D semiconductors.

Date: 2022
References: Add references at CitEc
Citations: View citations in EconPapers (8)

Downloads: (external link)
https://www.nature.com/articles/s41586-022-04745-7 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:606:y:2022:i:7912:d:10.1038_s41586-022-04745-7

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/s41586-022-04745-7

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().