Highly efficient blue InGaN nanoscale light-emitting diodes

Mihyang Sheen (), Yunhyuk Ko, Dong-uk Kim, Jongil Kim, Jin-ho Byun, YongSeok Choi, Jonghoon Ha, Ki Young Yeon, Dohyung Kim, Jungwoon Jung, Jinyoung Choi, Ran Kim, Jewon Yoo, Inpyo Kim, Chanwoo Joo, Nami Hong, Joohee Lee, Sang Ho Jeon, Sang Ho Oh, Jaekwang Lee, Nari Ahn and Changhee Lee ()
Additional contact information
Mihyang Sheen: Samsung Display
Yunhyuk Ko: Samsung Display
Dong-uk Kim: Samsung Display
Jongil Kim: Korea Institute of Energy Technology (KENTECH)
Jin-ho Byun: Pusan National University
YongSeok Choi: Samsung Electronics LED Business Team
Jonghoon Ha: Samsung Electronics LED Business Team
Ki Young Yeon: Samsung Display
Dohyung Kim: Samsung Display
Jungwoon Jung: Samsung Display
Jinyoung Choi: Samsung Display
Ran Kim: Samsung Display
Jewon Yoo: Samsung Display
Inpyo Kim: Samsung Display
Chanwoo Joo: Samsung Display
Nami Hong: Samsung Display
Joohee Lee: Samsung Display
Sang Ho Jeon: Samsung Display
Sang Ho Oh: Korea Institute of Energy Technology (KENTECH)
Jaekwang Lee: Pusan National University
Nari Ahn: Samsung Display
Changhee Lee: Samsung Display

Nature, 2022, vol. 608, issue 7921, 56-61

Abstract: Abstract Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability1–5. However, μLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction6–9. Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE. To overcome the size-dependent EQE reduction problem8,9, we studied the interaction between the GaN surface and the sidewall passivation layer through various analyses. Minimizing the point defects created during the passivation process is crucial to manufacturing high-performance nLEDs. Notably, the sol–gel method is advantageous for the passivation because SiO2 nanoparticles are adsorbed on the GaN surface, thereby minimizing its atomic interactions. The fabricated nLEDs showed an EQE of 20.2 ± 0.6%, the highest EQE value ever reported for the LED in the nanoscale. This work opens the way for manufacturing self-emissive nLED displays that can become an enabling technology for next-generation displays.

Date: 2022
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DOI: 10.1038/s41586-022-04933-5

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