P-type electrical contacts for 2D transition-metal dichalcogenides

Yan Wang, Jong Chan Kim, Yang Li, Kyung Yeol Ma, Seokmo Hong, Minsu Kim, Hyeon Suk Shin, Hu Young Jeong and Manish Chhowalla ()
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Yan Wang: University of Cambridge
Jong Chan Kim: Ulsan National Institute of Science and Technology (UNIST)
Yang Li: University of Cambridge
Kyung Yeol Ma: Ulsan National Institute of Science and Technology (UNIST)
Seokmo Hong: Ulsan National Institute of Science and Technology (UNIST)
Minsu Kim: Ulsan National Institute of Science and Technology (UNIST)
Hyeon Suk Shin: Ulsan National Institute of Science and Technology (UNIST)
Hu Young Jeong: Ulsan National Institute of Science and Technology (UNIST)
Manish Chhowalla: University of Cambridge

Nature, 2022, vol. 610, issue 7930, 61-66

Abstract: Abstract Digital logic circuits are based on complementary pairs of n- and p-type field effect transistors (FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) or bulk semiconductors, substitutional doping of acceptor or donor impurities is used to achieve p- and n-type FETs. However, the controllable p-type doping of low-dimensional semiconductors such as two-dimensional (2D) transition-metal dichalcogenides (TMDs) has proved to be challenging. Although it is possible to achieve high-quality, low-resistance n-type van der Waals (vdW) contacts on 2D TMDs1–5, obtaining p-type devices by evaporating high-work-function metals onto 2D TMDs has not been realized so far. Here we report high-performance p-type devices on single- and few-layered molybdenum disulfide and tungsten diselenide based on industry-compatible electron beam evaporation of high-work-function metals such as palladium and platinum. Using atomic resolution imaging and spectroscopy, we demonstrate near-ideal vdW interfaces without chemical interactions between the 2D TMDs and 3D metals. Electronic transport measurements reveal that the Fermi level is unpinned and p-type FETs based on vdW contacts exhibit low contact resistance of 3.3 kΩ µm, high mobility values of approximately 190 cm2 V−1 s−1 at room temperature, saturation currents in excess of 10−5 A μm−1 and an on/off ratio of 107. We also demonstrate an ultra-thin photovoltaic cell based on n- and p-type vdW contacts with an open circuit voltage of 0.6 V and a power conversion efficiency of 0.82%.

Date: 2022
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DOI: 10.1038/s41586-022-05134-w

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