Approaching the quantum limit in two-dimensional semiconductor contacts

Weisheng Li, Xiaoshu Gong, Zhihao Yu, Liang Ma, Wenjie Sun, Si Gao, Çağıl Köroğlu, Wenfeng Wang, Lei Liu, Taotao Li, Hongkai Ning, Dongxu Fan, Yifei Xu, Xuecou Tu, Tao Xu, Litao Sun, Wenhui Wang, Junpeng Lu, Zhenhua Ni, Jia Li, Xidong Duan, Peng Wang, Yuefeng Nie, Hao Qiu, Yi Shi (), Eric Pop, Jinlan Wang () and Xinran Wang ()
Additional contact information
Weisheng Li: Nanjing University
Xiaoshu Gong: Southeast University
Zhihao Yu: Nanjing University
Liang Ma: Southeast University
Wenjie Sun: Nanjing University
Si Gao: Nanjing University
Çağıl Köroğlu: Stanford University
Wenfeng Wang: Nanjing University
Lei Liu: Nanjing University
Taotao Li: Nanjing University
Hongkai Ning: Nanjing University
Dongxu Fan: Nanjing University
Yifei Xu: Nanjing University
Xuecou Tu: Nanjing University
Tao Xu: Southeast University
Litao Sun: Southeast University
Wenhui Wang: Southeast University
Junpeng Lu: Southeast University
Zhenhua Ni: Southeast University
Jia Li: Hunan University
Xidong Duan: Hunan University
Peng Wang: Nanjing University
Yuefeng Nie: Nanjing University
Hao Qiu: Nanjing University
Yi Shi: Nanjing University
Eric Pop: Stanford University
Jinlan Wang: Southeast University
Xinran Wang: Nanjing University

Nature, 2023, vol. 613, issue 7943, 274-279

Abstract: Abstract The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance1,2. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited3–12. In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues3,7. Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ( $$01\bar{1}2$$ 01 1 ̅ 2 ) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 108 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance, threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance13. The excellent electrical performance, stability and variability make antimony ( $$01\bar{1}2$$ 01 1 ̅ 2 ) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon.

Date: 2023
References: Add references at CitEc
Citations: View citations in EconPapers (5)

Downloads: (external link)
https://www.nature.com/articles/s41586-022-05431-4 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:613:y:2023:i:7943:d:10.1038_s41586-022-05431-4

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/s41586-022-05431-4

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().