Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

Peixin Qin, Han Yan, Xiaoning Wang, Hongyu Chen, Ziang Meng, Jianting Dong, Meng Zhu, Jialin Cai, Zexin Feng, Xiaorong Zhou, Li Liu, Tianli Zhang, Zhongming Zeng (), Jia Zhang (), Chengbao Jiang () and Zhiqi Liu ()
Additional contact information
Peixin Qin: Beihang University
Han Yan: Beihang University
Xiaoning Wang: Beihang University
Hongyu Chen: Beihang University
Ziang Meng: Beihang University
Jianting Dong: Huazhong University of Science and Technology
Meng Zhu: Huazhong University of Science and Technology
Jialin Cai: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Zexin Feng: Beihang University
Xiaorong Zhou: Beihang University
Li Liu: Beihang University
Tianli Zhang: Beihang University
Zhongming Zeng: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Jia Zhang: Huazhong University of Science and Technology
Chengbao Jiang: Beihang University
Zhiqi Liu: Beihang University

Nature, 2023, vol. 613, issue 7944, 485-489

Abstract: Abstract Antiferromagnetic spintronics1–16 is a rapidly growing field in condensed-matter physics and information technology with potential applications for high-density and ultrafast information devices. However, the practical application of these devices has been largely limited by small electrical outputs at room temperature. Here we describe a room-temperature exchange-bias effect between a collinear antiferromagnet, MnPt, and a non-collinear antiferromagnet, Mn3Pt, which together are similar to a ferromagnet–antiferromagnet exchange-bias system. We use this exotic effect to build all-antiferromagnetic tunnel junctions with large nonvolatile room-temperature magnetoresistance values that reach a maximum of about 100%. Atomistic spin dynamics simulations reveal that uncompensated localized spins at the interface of MnPt produce the exchange bias. First-principles calculations indicate that the remarkable tunnelling magnetoresistance originates from the spin polarization of Mn3Pt in the momentum space. All-antiferromagnetic tunnel junction devices, with nearly vanishing stray fields and strongly enhanced spin dynamics up to the terahertz level, could be important for next-generation highly integrated and ultrafast memory devices7,9,16.

Date: 2023
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DOI: 10.1038/s41586-022-05461-y

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