Vertical organic electrochemical transistors for complementary circuits

Wei Huang (), Jianhua Chen, Yao Yao, Ding Zheng (), Xudong Ji, Liang-Wen Feng, David Moore, Nicholas R. Glavin, Miao Xie, Yao Chen, Robert M. Pankow, Abhijith Surendran, Zhi Wang, Yu Xia, Libing Bai, Jonathan Rivnay, Jianfeng Ping, Xugang Guo, Yuhua Cheng (), Tobin J. Marks () and Antonio Facchetti ()
Additional contact information
Wei Huang: University of Electronic Science and Technology of China (UESTC)
Jianhua Chen: Northwestern University
Yao Yao: Northwestern University
Ding Zheng: Northwestern University
Xudong Ji: Northwestern University
Liang-Wen Feng: Northwestern University
David Moore: Materials and Manufacturing DirectorateWPAFB
Nicholas R. Glavin: Materials and Manufacturing DirectorateWPAFB
Miao Xie: University of Electronic Science and Technology of China (UESTC)
Yao Chen: Northwestern University
Robert M. Pankow: Northwestern University
Abhijith Surendran: Northwestern University
Zhi Wang: Northwestern University
Yu Xia: Flexterra Inc. 8025 Lamon Avenue
Libing Bai: University of Electronic Science and Technology of China (UESTC)
Jonathan Rivnay: Northwestern University
Jianfeng Ping: Zhejiang University
Xugang Guo: Southern University of Science and Technology (SUSTech)
Yuhua Cheng: University of Electronic Science and Technology of China (UESTC)
Tobin J. Marks: Northwestern University
Antonio Facchetti: Northwestern University

Nature, 2023, vol. 613, issue 7944, 496-502

Abstract: Abstract Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages ( 10 mS) and biocompatibility1–5. However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance6–8. Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending redox-active semiconducting polymers with a redox-inactive photocurable and/or photopatternable polymer to form an ion-permeable semiconducting channel, implemented in a simple, scalable vertical architecture that has a dense, impermeable top contact. Footprint current densities exceeding 1 kA cm−2 at less than ±0.7 V, transconductances of 0.2–0.4 S, short transient times of less than 1 ms and ultra-stable switching (>50,000 cycles) are achieved in, to our knowledge, the first vertically stacked complementary vertical OECT logic circuits. This architecture opens many possibilities for fundamental studies of organic semiconductor redox chemistry and physics in nanoscopically confined spaces, without macroscopic electrolyte contact, as well as wearable and implantable device applications.

Date: 2023
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DOI: 10.1038/s41586-022-05592-2

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