Non-epitaxial single-crystal 2D material growth by geometric confinement

Ki Seok Kim, Doyoon Lee, Celesta S. Chang, Seunghwan Seo, Yaoqiao Hu, Soonyoung Cha, Hyunseok Kim, Jiho Shin, Ju-Hee Lee, Sangho Lee, Justin S. Kim, Ki Hyun Kim, Jun Min Suh, Yuan Meng, Bo-In Park, Jung-Hoon Lee, Hyung-Sang Park, Hyun S. Kum, Moon-Ho Jo, Geun Young Yeom, Kyeongjae Cho, Jin-Hong Park (), Sang-Hoon Bae () and Jeehwan Kim ()
Additional contact information
Ki Seok Kim: Massachusetts Institute of Technology
Doyoon Lee: Massachusetts Institute of Technology
Celesta S. Chang: Massachusetts Institute of Technology
Seunghwan Seo: Massachusetts Institute of Technology
Yaoqiao Hu: The University of Texas at Dallas
Soonyoung Cha: Institute for Basic Science (IBS)
Hyunseok Kim: Massachusetts Institute of Technology
Jiho Shin: Massachusetts Institute of Technology
Ju-Hee Lee: School of Electronic and Electrical Engineering Sungkyunkwan University
Sangho Lee: Massachusetts Institute of Technology
Justin S. Kim: Washington University in St. Louis
Ki Hyun Kim: Sungkyunkwan University
Jun Min Suh: Massachusetts Institute of Technology
Yuan Meng: Washington University in St. Louis
Bo-In Park: Massachusetts Institute of Technology
Jung-Hoon Lee: ISAC Research
Hyung-Sang Park: ISAC Research
Hyun S. Kum: Yonsei University
Moon-Ho Jo: Institute for Basic Science (IBS)
Geun Young Yeom: Sungkyunkwan University
Kyeongjae Cho: The University of Texas at Dallas
Jin-Hong Park: School of Electronic and Electrical Engineering Sungkyunkwan University
Sang-Hoon Bae: Washington University in St. Louis
Jeehwan Kim: Massachusetts Institute of Technology

Nature, 2023, vol. 614, issue 7946, 88-94

Abstract: Abstract Two-dimensional (2D) materials and their heterostructures show a promising path for next-generation electronics1–3. Nevertheless, 2D-based electronics have not been commercialized, owing mainly to three critical challenges: i) precise kinetic control of layer-by-layer 2D material growth, ii) maintaining a single domain during the growth, and iii) wafer-scale controllability of layer numbers and crystallinity. Here we introduce a deterministic, confined-growth technique that can tackle these three issues simultaneously, thus obtaining wafer-scale single-domain 2D monolayer arrays and their heterostructures on arbitrary substrates. We geometrically confine the growth of the first set of nuclei by defining a selective growth area via patterning SiO2 masks on two-inch substrates. Owing to substantial reduction of the growth duration at the micrometre-scale SiO2 trenches, we obtain wafer-scale single-domain monolayer WSe2 arrays on the arbitrary substrates by filling the trenches via short growth of the first set of nuclei, before the second set of nuclei is introduced, thus without requiring epitaxial seeding. Further growth of transition metal dichalcogenides with the same principle yields the formation of single-domain MoS2/WSe2 heterostructures. Our achievement will lay a strong foundation for 2D materials to fit into industrial settings.

Date: 2023
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DOI: 10.1038/s41586-022-05524-0

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