Pseudospin-selective Floquet band engineering in black phosphorus

Shaohua Zhou, Changhua Bao, Benshu Fan, Hui Zhou, Qixuan Gao, Haoyuan Zhong, Tianyun Lin, Hang Liu, Pu Yu, Peizhe Tang, Sheng Meng, Wenhui Duan and Shuyun Zhou ()
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Shaohua Zhou: Tsinghua University
Changhua Bao: Tsinghua University
Benshu Fan: Tsinghua University
Hui Zhou: Institute of Physics, Chinese Academy of Sciences
Qixuan Gao: Tsinghua University
Haoyuan Zhong: Tsinghua University
Tianyun Lin: Tsinghua University
Hang Liu: Institute of Physics, Chinese Academy of Sciences
Pu Yu: Tsinghua University
Peizhe Tang: Beihang University
Sheng Meng: Institute of Physics, Chinese Academy of Sciences
Wenhui Duan: Tsinghua University
Shuyun Zhou: Tsinghua University

Nature, 2023, vol. 614, issue 7946, 75-80

Abstract: Abstract Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials1–3, cold atoms4 and photonic systems5 through hybridization with photon-dressed Floquet states6 in the strong-coupling limit, dubbed Floquet engineering. Such interaction leads to tailored properties of quantum materials7–11, for example, modifications of the topological properties of Dirac materials12,13 and modulation of the optical response14–16. Despite extensive research interests over the past decade3,8,17–20, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, on the basis of time and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor, black phosphorus. On near-resonance pumping at a photon energy of 340–440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favouring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquetband engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.

Date: 2023
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DOI: 10.1038/s41586-022-05610-3

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