2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Congwei Tan, Mengshi Yu, Junchuan Tang, Xiaoyin Gao, Yuling Yin, Yichi Zhang, Jingyue Wang, Xinyu Gao, Congcong Zhang, Xuehan Zhou, Liming Zheng, Hongtao Liu, Kaili Jiang, Feng Ding and Hailin Peng ()
Additional contact information
Congwei Tan: Peking University
Mengshi Yu: Peking University
Junchuan Tang: Peking University
Xiaoyin Gao: Peking University
Yuling Yin: Institute for Basic Science
Yichi Zhang: Peking University
Jingyue Wang: Peking University
Xinyu Gao: Tsinghua University
Congcong Zhang: Peking University
Xuehan Zhou: Peking University
Liming Zheng: Peking University
Hongtao Liu: Peking University
Kaili Jiang: Tsinghua University
Feng Ding: Institute for Basic Science
Hailin Peng: Peking University

Nature, 2023, vol. 616, issue 7955, 66-72

Abstract: Abstract Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors1–5, but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2 nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270 cm2 V−1 s−1, ultralow off-state current (IOFF) down to about 1 pA μm−1, high on/off current ratios (ION/IOFF) up to 108 and high on-state current (ION) up to 830 μA μm−1 at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)6. The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore’s law.

Date: 2023
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DOI: 10.1038/s41586-023-05797-z

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