Gate-tunable heavy fermions in a moiré Kondo lattice

Wenjin Zhao, Bowen Shen, Zui Tao, Zhongdong Han, Kaifei Kang, Kenji Watanabe, Takashi Taniguchi, Kin Fai Mak () and Jie Shan ()
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Wenjin Zhao: Kavli Institute at Cornell for Nanoscale Science, Cornell University
Bowen Shen: Cornell University
Zui Tao: Cornell University
Zhongdong Han: Cornell University
Kaifei Kang: Cornell University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Kin Fai Mak: Kavli Institute at Cornell for Nanoscale Science, Cornell University
Jie Shan: Kavli Institute at Cornell for Nanoscale Science, Cornell University

Nature, 2023, vol. 616, issue 7955, 61-65

Abstract: Abstract The Kondo lattice—a matrix of local magnetic moments coupled through spin-exchange interactions to itinerant conduction electrons—is a prototype of strongly correlated quantum matter1–4. Usually, Kondo lattices are realized in intermetallic compounds containing lanthanide or actinide1,2. The complex electronic structure and limited tunability of both the electron density and exchange interactions in these bulk materials pose considerable challenges to studying Kondo lattice physics. Here we report the realization of a synthetic Kondo lattice in AB-stacked MoTe2/WSe2 moiré bilayers, in which the MoTe2 layer is tuned to a Mott insulating state, supporting a triangular moiré lattice of local moments, and the WSe2 layer is doped with itinerant conduction carriers. We observe heavy fermions with a large Fermi surface below the Kondo temperature. We also observe the destruction of the heavy fermions by an external magnetic field with an abrupt decrease in the Fermi surface size and quasi-particle mass. We further demonstrate widely and continuously gate-tunable Kondo temperatures through either the itinerant carrier density or the Kondo interaction. Our study opens the possibility of in situ access to the phase diagram of the Kondo lattice with exotic quantum criticalities in a single device based on semiconductor moiré materials2–9.

Date: 2023
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DOI: 10.1038/s41586-023-05800-7

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