EconPapers    
Economics at your fingertips  
 

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Congwei Tan, Mengshi Yu, Junchuan Tang, Xiaoyin Gao, Yuling Yin, Yichi Zhang, Jingyue Wang, Xinyu Gao, Congcong Zhang, Xuehan Zhou, Liming Zheng, Hongtao Liu, Kaili Jiang, Feng Ding and Hailin Peng ()
Additional contact information
Congwei Tan: Peking University
Mengshi Yu: Peking University
Junchuan Tang: Peking University
Xiaoyin Gao: Peking University
Yuling Yin: Institute for Basic Science
Yichi Zhang: Peking University
Jingyue Wang: Peking University
Xinyu Gao: Tsinghua University
Congcong Zhang: Peking University
Xuehan Zhou: Peking University
Liming Zheng: Peking University
Hongtao Liu: Peking University
Kaili Jiang: Tsinghua University
Feng Ding: Institute for Basic Science
Hailin Peng: Peking University

Nature, 2023, vol. 617, issue 7961, E13-E13

Date: 2023
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41586-023-06093-6 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:617:y:2023:i:7961:d:10.1038_s41586-023-06093-6

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/s41586-023-06093-6

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().

 
Page updated 2025-03-19
Handle: RePEc:nat:nature:v:617:y:2023:i:7961:d:10.1038_s41586-023-06093-6