Doping of molecular semiconductors through proton-coupled electron transfer

Masaki Ishii, Yu Yamashita (), Shun Watanabe, Katsuhiko Ariga and Jun Takeya
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Masaki Ishii: National Institute for Materials Science (NIMS)
Yu Yamashita: National Institute for Materials Science (NIMS)
Shun Watanabe: The University of Tokyo
Katsuhiko Ariga: National Institute for Materials Science (NIMS)
Jun Takeya: National Institute for Materials Science (NIMS)

Nature, 2023, vol. 622, issue 7982, 285-291

Abstract: Abstract The chemical doping of molecular semiconductors is based on electron-transfer reactions between the semiconductor and dopant molecules; here, the redox potential of the dopant is key to control the Fermi level of the semiconductor1,2. The tunability and reproducibility of chemical doping are limited by the availability of dopant materials and the effects of impurities such as water. Here we focused on proton-coupled electron-transfer (PCET) reactions, which are widely used in biochemical processes3,4; their redox potentials depend on an easily handled parameter, that is, proton activity. We immersed p-type organic semiconductor thin films in aqueous solutions with PCET-based redox pairs and hydrophobic molecular ions. Synergistic reactions of PCET and ion intercalation resulted in efficient chemical doping of crystalline organic semiconductor thin films under ambient conditions. In accordance with the Nernst equation, the Fermi levels of the semiconductors were controlled reproducibly with a high degree of precision—a thermal energy of about 25 millielectronvolts at room temperature and over a few hundred millielectronvolts around the band edge. A reference-electrode-free, resistive pH sensor based on this method is also proposed. A connection between semiconductor doping and proton activity, a widely used parameter in chemical and biochemical processes, may help create a platform for ambient semiconductor processes and biomolecular electronics.

Date: 2023
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DOI: 10.1038/s41586-023-06504-8

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