Towards linking lab and field lifetimes of perovskite solar cells

Qi Jiang, Robert Tirawat, Ross A. Kerner, E. Ashley Gaulding, Yeming Xian, Xiaoming Wang, Jimmy M. Newkirk, Yanfa Yan, Joseph J. Berry and Kai Zhu ()
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Qi Jiang: National Renewable Energy Laboratory
Robert Tirawat: National Renewable Energy Laboratory
Ross A. Kerner: National Renewable Energy Laboratory
E. Ashley Gaulding: National Renewable Energy Laboratory
Yeming Xian: University of Toledo
Xiaoming Wang: University of Toledo
Jimmy M. Newkirk: National Renewable Energy Laboratory
Yanfa Yan: University of Toledo
Joseph J. Berry: National Renewable Energy Laboratory
Kai Zhu: National Renewable Energy Laboratory

Nature, 2023, vol. 623, issue 7986, 313-318

Abstract: Abstract Metal halide perovskite solar cells (PSCs) represent a promising low-cost thin-film photovoltaic technology, with unprecedented power conversion efficiencies obtained for both single-junction and tandem applications1–8. To push PSCs towards commercialization, it is critical, albeit challenging, to understand device reliability under real-world outdoor conditions where multiple stress factors (for example, light, heat and humidity) coexist, generating complicated degradation behaviours9–13. To quickly guide PSC development, it is necessary to identify accelerated indoor testing protocols that can correlate specific stressors with observed degradation modes in fielded devices. Here we use a state-of-the-art positive-intrinsic-negative (p–i–n) PSC stack (with power conversion efficiencies of up to approximately 25.5%) to show that indoor accelerated stability tests can predict our six-month outdoor ageing tests. Device degradation rates under illumination and at elevated temperatures are most instructive for understanding outdoor device reliability. We also find that the indium tin oxide/self-assembled monolayer-based hole transport layer/perovskite interface most strongly affects our device operation stability. Improving the ion-blocking properties of the self-assembled monolayer hole transport layer increases averaged device operational stability at 50 °C–85 °C by a factor of about 2.8, reaching over 1,000 h at 85 °C and to near 8,200 h at 50 °C, with a projected 20% degradation, which is among the best to date for high-efficiency p–i–n PSCs14–17.

Date: 2023
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DOI: 10.1038/s41586-023-06610-7

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