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Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene

Haibiao Zhou, Nadav Auerbach, Matan Uzan, Yaozhang Zhou, Nasrin Banu, Weifeng Zhi, Martin E. Huber, Kenji Watanabe, Takashi Taniguchi, Yuri Myasoedov, Binghai Yan and Eli Zeldov ()
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Haibiao Zhou: Weizmann Institute of Science
Nadav Auerbach: Weizmann Institute of Science
Matan Uzan: Weizmann Institute of Science
Yaozhang Zhou: Weizmann Institute of Science
Nasrin Banu: Weizmann Institute of Science
Weifeng Zhi: Weizmann Institute of Science
Martin E. Huber: University of Colorado Denver
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Yuri Myasoedov: Weizmann Institute of Science
Binghai Yan: Weizmann Institute of Science
Eli Zeldov: Weizmann Institute of Science

Nature, 2023, vol. 624, issue 7991, 275-281

Abstract: Abstract The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas–van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2–4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5–7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8–11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.

Date: 2023
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DOI: 10.1038/s41586-023-06763-5

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