Three-dimensional integration of two-dimensional field-effect transistors

Darsith Jayachandran (), Rahul Pendurthi (), Muhtasim Ul Karim Sadaf, Najam U Sakib, Andrew Pannone, Chen Chen, Ying Han, Nicholas Trainor, Shalini Kumari, Thomas V. Knight, Joan M. Redwing, Yang Yang and Saptarshi Das ()
Additional contact information
Darsith Jayachandran: Penn State University
Rahul Pendurthi: Penn State University
Muhtasim Ul Karim Sadaf: Penn State University
Najam U Sakib: Penn State University
Andrew Pannone: Penn State University
Chen Chen: Penn State University
Ying Han: Penn State University
Nicholas Trainor: Penn State University
Shalini Kumari: Penn State University
Thomas V. Knight: Penn State University
Joan M. Redwing: Penn State University
Yang Yang: Penn State University
Saptarshi Das: Penn State University

Nature, 2024, vol. 625, issue 7994, 276-281

Abstract: Abstract In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’1 but also introduces multifunctionalities for ‘More than Moore’2 technologies. Although silicon-based 3D integrated circuits are commercially available3–5, there is limited effort on 3D integration of emerging nanomaterials6,7 such as two-dimensional (2D) materials despite their unique functionalities7–10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, LCH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.

Date: 2024
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DOI: 10.1038/s41586-023-06860-5

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