High-speed and large-scale intrinsically stretchable integrated circuits

Donglai Zhong, Can Wu, Yuanwen Jiang, Yujia Yuan, Min-gu Kim, Yuya Nishio, Chien-Chung Shih, Weichen Wang, Jian-Cheng Lai, Xiaozhou Ji, Theodore Z. Gao, Yi-Xuan Wang, Chengyi Xu, Yu Zheng, Zhiao Yu, Huaxin Gong, Naoji Matsuhisa, Chuanzhen Zhao, Yusheng Lei, Deyu Liu, Song Zhang, Yuto Ochiai, Shuhan Liu, Shiyuan Wei, Jeffrey B.-H. Tok and Zhenan Bao ()
Additional contact information
Donglai Zhong: Stanford University
Can Wu: Stanford University
Yuanwen Jiang: Stanford University
Yujia Yuan: Stanford University
Min-gu Kim: Stanford University
Yuya Nishio: Stanford University
Chien-Chung Shih: Stanford University
Weichen Wang: Stanford University
Jian-Cheng Lai: Stanford University
Xiaozhou Ji: Stanford University
Theodore Z. Gao: Stanford University
Yi-Xuan Wang: Stanford University
Chengyi Xu: Stanford University
Yu Zheng: Stanford University
Zhiao Yu: Stanford University
Huaxin Gong: Stanford University
Naoji Matsuhisa: Stanford University
Chuanzhen Zhao: Stanford University
Yusheng Lei: Stanford University
Deyu Liu: Stanford University
Song Zhang: Stanford University
Yuto Ochiai: Stanford University
Shuhan Liu: Stanford University
Shiyuan Wei: Stanford University
Jeffrey B.-H. Tok: Stanford University
Zhenan Bao: Stanford University

Nature, 2024, vol. 627, issue 8003, 313-320

Abstract: Abstract Intrinsically stretchable electronics with skin-like mechanical properties have been identified as a promising platform for emerging applications ranging from continuous physiological monitoring to real-time analysis of health conditions, to closed-loop delivery of autonomous medical treatment1–7. However, current technologies could only reach electrical performance at amorphous-silicon level (that is, charge-carrier mobility of about 1 cm2 V−1 s−1), low integration scale (for example, 54 transistors per circuit) and limited functionalities8–11. Here we report high-density, intrinsically stretchable transistors and integrated circuits with high driving ability, high operation speed and large-scale integration. They were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design. Our intrinsically stretchable transistors exhibit an average field-effect mobility of more than 20 cm2 V−1 s−1 under 100% strain, a device density of 100,000 transistors per cm2, including interconnects and a high drive current of around 2 μA μm−1 at a supply voltage of 5 V. Notably, these achieved parameters are on par with state-of-the-art flexible transistors based on metal-oxide, carbon nanotube and polycrystalline silicon materials on plastic substrates12–14. Furthermore, we realize a large-scale integrated circuit with more than 1,000 transistors and a stage-switching frequency greater than 1 MHz, for the first time, to our knowledge, in intrinsically stretchable electronics. Moreover, we demonstrate a high-throughput braille recognition system that surpasses human skin sensing ability, enabled by an active-matrix tactile sensor array with a record-high density of 2,500 units per cm2, and a light-emitting diode display with a high refreshing speed of 60 Hz and excellent mechanical robustness. The above advancements in device performance have substantially enhanced the abilities of skin-like electronics.

Date: 2024
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DOI: 10.1038/s41586-024-07096-7

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