Valleytronics in bulk MoS2 with a topologic optical field

Igor Tyulnev, Álvaro Jiménez-Galán, Julita Poborska, Lenard Vamos, Philip St. J. Russell, Francesco Tani, Olga Smirnova, Misha Ivanov, Rui E. F. Silva and Jens Biegert ()
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Igor Tyulnev: The Barcelona Institute of Science and Technology
Álvaro Jiménez-Galán: Consejo Superior de Investigaciones Científicas (CSIC)
Julita Poborska: The Barcelona Institute of Science and Technology
Lenard Vamos: The Barcelona Institute of Science and Technology
Philip St. J. Russell: Max-Planck Institute for Science of Light
Francesco Tani: Max-Planck Institute for Science of Light
Olga Smirnova: Max-Born-Institut
Misha Ivanov: Max-Born-Institut
Rui E. F. Silva: Consejo Superior de Investigaciones Científicas (CSIC)
Jens Biegert: The Barcelona Institute of Science and Technology

Nature, 2024, vol. 628, issue 8009, 746-751

Abstract: Abstract The valley degree of freedom1–4 of electrons in materials promises routes towards energy-efficient information storage with enticing prospects for quantum information processing5–7. Current challenges in utilizing valley polarization are symmetry conditions that require monolayer structures8,9 or specific material engineering10–13, non-resonant optical control to avoid energy dissipation and the ability to switch valley polarization at optical speed. We demonstrate all-optical and non-resonant control over valley polarization using bulk MoS2, a centrosymmetric material without Berry curvature at the valleys. Our universal method utilizes spin angular momentum-shaped trefoil optical control pulses14,15 to switch the material’s electronic topology and induce valley polarization by transiently breaking time and space inversion symmetry16 through a simple phase rotation. We confirm valley polarization through the transient generation of the second harmonic of a non-collinear optical probe pulse, depending on the trefoil phase rotation. The investigation shows that direct optical control over the valley degree of freedom is not limited to monolayer structures. Indeed, such control is possible for systems with an arbitrary number of layers and for bulk materials. Non-resonant valley control is universal and, at optical speeds, unlocks the possibility of engineering efficient multimaterial valleytronic devices operating on quantum coherent timescales.

Date: 2024
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DOI: 10.1038/s41586-024-07156-y

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