Graphene nanoribbons grown in hBN stacks for high-performance electronics
Bosai Lyu,
Jiajun Chen,
Sen Wang,
Shuo Lou,
Peiyue Shen,
Jingxu Xie,
Lu Qiu,
Izaac Mitchell,
Can Li,
Cheng Hu,
Xianliang Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
Jinfeng Jia,
Qi Liang,
Guorui Chen,
Tingxin Li,
Shiyong Wang,
Wengen Ouyang (),
Oded Hod,
Feng Ding (),
Michael Urbakh () and
Zhiwen Shi ()
Additional contact information
Bosai Lyu: Shanghai Jiao Tong University
Jiajun Chen: Shanghai Jiao Tong University
Sen Wang: Wuhan University
Shuo Lou: Shanghai Jiao Tong University
Peiyue Shen: Shanghai Jiao Tong University
Jingxu Xie: Shanghai Jiao Tong University
Lu Qiu: Ulsan National Institute of Science and Technology
Izaac Mitchell: Ulsan National Institute of Science and Technology
Can Li: Shanghai Jiao Tong University
Cheng Hu: Shanghai Jiao Tong University
Xianliang Zhou: Shanghai Jiao Tong University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Xiaoqun Wang: Shanghai Jiao Tong University
Jinfeng Jia: Shanghai Jiao Tong University
Qi Liang: Shanghai Jiao Tong University
Guorui Chen: Shanghai Jiao Tong University
Tingxin Li: Shanghai Jiao Tong University
Shiyong Wang: Shanghai Jiao Tong University
Wengen Ouyang: Wuhan University
Oded Hod: Tel Aviv University
Feng Ding: Ulsan National Institute of Science and Technology
Michael Urbakh: Tel Aviv University
Zhiwen Shi: Shanghai Jiao Tong University
Nature, 2024, vol. 628, issue 8009, 758-764
Abstract:
Abstract Van der Waals encapsulation of two-dimensional materials in hexagonal boron nitride (hBN) stacks is a promising way to create ultrahigh-performance electronic devices1–4. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination and unscalable. Here we report the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) in hBN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow (
Date: 2024
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DOI: 10.1038/s41586-024-07243-0
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