Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Li Wang (), Jiajie Qi, Wenya Wei, Mengqi Wu, Zhibin Zhang, Xiaomin Li, Huacong Sun, Quanlin Guo, Meng Cao, Qinghe Wang, Chao Zhao, Yuxuan Sheng, Zhetong Liu, Can Liu, Muhong Wu, Zhi Xu, Wenlong Wang, Hao Hong, Peng Gao, Menghao Wu, Zhu-Jun Wang, Xiaozhi Xu, Enge Wang, Feng Ding (), Xiaorui Zheng (), Kaihui Liu () and Xuedong Bai ()
Additional contact information
Li Wang: Chinese Academy of Sciences
Jiajie Qi: Peking University
Wenya Wei: South China Normal University
Mengqi Wu: Westlake University
Zhibin Zhang: Peking University
Xiaomin Li: Chinese Academy of Sciences
Huacong Sun: Chinese Academy of Sciences
Quanlin Guo: Peking University
Meng Cao: Chinese Academy of Sciences
Qinghe Wang: Peking University
Chao Zhao: Shenzhen Institute of Advanced Technology
Yuxuan Sheng: Huazhong University of Science and Technology
Zhetong Liu: Peking University
Can Liu: Renmin University of China
Muhong Wu: Peking University
Zhi Xu: Songshan Lake Materials Laboratory
Wenlong Wang: Chinese Academy of Sciences
Hao Hong: Peking University
Peng Gao: Peking University
Menghao Wu: Huazhong University of Science and Technology
Zhu-Jun Wang: ShanghaiTech University
Xiaozhi Xu: South China Normal University
Enge Wang: Chinese Academy of Sciences
Feng Ding: Shenzhen Institute of Advanced Technology
Xiaorui Zheng: Westlake University
Kaihui Liu: Peking University
Xuedong Bai: Chinese Academy of Sciences

Nature, 2024, vol. 629, issue 8010, 74-79

Abstract: Abstract Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1–4—including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds—but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5–23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24–26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron–nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.

Date: 2024
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DOI: 10.1038/s41586-024-07286-3

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