Selenium-alloyed tellurium oxide for amorphous p-channel transistors

Ao Liu (), Yong-Sung Kim, Min Gyu Kim, Youjin Reo, Taoyu Zou, Taesu Choi, Sai Bai, Huihui Zhu () and Yong-Young Noh ()
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Ao Liu: University of Electronic Science and Technology of China
Yong-Sung Kim: Korea Research Institute of Standards and Science
Min Gyu Kim: Pohang University of Science and Technology
Youjin Reo: Pohang University of Science and Technology
Taoyu Zou: Pohang University of Science and Technology
Taesu Choi: Pohang University of Science and Technology
Sai Bai: University of Electronic Science and Technology of China
Huihui Zhu: Pohang University of Science and Technology
Yong-Young Noh: Pohang University of Science and Technology

Nature, 2024, vol. 629, issue 8013, 798-802

Abstract: Abstract Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2–8. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal–oxide–semiconductor technology and integrated circuits9–11. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p-orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm2 V−1 s−1 and on/off current ratios of 106–107, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.

Date: 2024
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DOI: 10.1038/s41586-024-07360-w

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