Van der Waals polarity-engineered 3D integration of 2D complementary logic

Yimeng Guo, Jiangxu Li, Xuepeng Zhan, Chunwen Wang, Min Li, Biao Zhang, Zirui Wang, Yueyang Liu, Kaining Yang, Hai Wang, Wanying Li, Pingfan Gu, Zhaoping Luo, Yingjia Liu, Peitao Liu, Bo Chen, Kenji Watanabe, Takashi Taniguchi, Xing-Qiu Chen, Chengbing Qin, Jiezhi Chen, Dongming Sun, Jing Zhang, Runsheng Wang, Jianpeng Liu, Yu Ye, Xiuyan Li (), Yanglong Hou (), Wu Zhou (), Hanwen Wang () and Zheng Han ()
Additional contact information
Yimeng Guo: Institute of Metal Research, Chinese Academy of Sciences
Jiangxu Li: Institute of Metal Research, Chinese Academy of Sciences
Xuepeng Zhan: Shandong University
Chunwen Wang: University of Chinese Academy of Sciences
Min Li: ShanghaiTech University
Biao Zhang: Shenzhen Campus of Sun Yat-Sen University
Zirui Wang: Peking University
Yueyang Liu: Chinese Academy of Sciences Beijing
Kaining Yang: Shanxi University
Hai Wang: Shandong University
Wanying Li: Institute of Metal Research, Chinese Academy of Sciences
Pingfan Gu: Collaborative Innovation Center of Quantum Matter
Zhaoping Luo: Institute of Metal Research, Chinese Academy of Sciences
Yingjia Liu: Institute of Metal Research, Chinese Academy of Sciences
Peitao Liu: Institute of Metal Research, Chinese Academy of Sciences
Bo Chen: Shandong University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Xing-Qiu Chen: Institute of Metal Research, Chinese Academy of Sciences
Chengbing Qin: Shanxi University
Jiezhi Chen: Shandong University
Dongming Sun: Institute of Metal Research, Chinese Academy of Sciences
Jing Zhang: Shanxi University
Runsheng Wang: Peking University
Jianpeng Liu: ShanghaiTech University
Yu Ye: Collaborative Innovation Center of Quantum Matter
Xiuyan Li: Institute of Metal Research, Chinese Academy of Sciences
Yanglong Hou: Shenzhen Campus of Sun Yat-Sen University
Wu Zhou: University of Chinese Academy of Sciences
Hanwen Wang: Liaoning Academy of Materials
Zheng Han: Shanxi University

Nature, 2024, vol. 630, issue 8016, 346-352

Abstract: Abstract Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1–3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6–8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9–17) and MoS2 (refs. 11,18–28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V−1 s−1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.

Date: 2024
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DOI: 10.1038/s41586-024-07438-5

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