Room-temperature spin injection across a chiral perovskite/III–V interface

Matthew P. Hautzinger, Xin Pan, Steven C. Hayden, Jiselle Y. Ye, Qi Jiang, Mickey J. Wilson, Alan J. Phillips, Yifan Dong, Emily K. Raulerson, Ian A. Leahy, Chun-Sheng Jiang, Jeffrey L. Blackburn, Joseph M. Luther, Yuan Lu, Katherine Jungjohann, Z. Valy Vardeny, Joseph J. Berry, Kirstin Alberi and Matthew C. Beard ()
Additional contact information
Matthew P. Hautzinger: National Renewable Energy Laboratory (NREL)
Xin Pan: University of Utah
Steven C. Hayden: National Renewable Energy Laboratory (NREL)
Jiselle Y. Ye: National Renewable Energy Laboratory (NREL)
Qi Jiang: National Renewable Energy Laboratory (NREL)
Mickey J. Wilson: National Renewable Energy Laboratory (NREL)
Alan J. Phillips: National Renewable Energy Laboratory (NREL)
Yifan Dong: National Renewable Energy Laboratory (NREL)
Emily K. Raulerson: National Renewable Energy Laboratory (NREL)
Ian A. Leahy: National Renewable Energy Laboratory (NREL)
Chun-Sheng Jiang: National Renewable Energy Laboratory (NREL)
Jeffrey L. Blackburn: National Renewable Energy Laboratory (NREL)
Joseph M. Luther: National Renewable Energy Laboratory (NREL)
Yuan Lu: Université de Lorraine, CNRS, UMR 7198
Katherine Jungjohann: National Renewable Energy Laboratory (NREL)
Z. Valy Vardeny: University of Utah
Joseph J. Berry: National Renewable Energy Laboratory (NREL)
Kirstin Alberi: National Renewable Energy Laboratory (NREL)
Matthew C. Beard: National Renewable Energy Laboratory (NREL)

Nature, 2024, vol. 631, issue 8020, 307-312

Abstract: Abstract Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality1. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces2. Here we demonstrate spin injection across chiral halide perovskite/III–V interfaces achieving spin accumulation in a standard semiconductor III–V (AlxGa1−x)0.5In0.5P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15 ± 4%. The chiral perovskite/III–V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. These findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin.

Date: 2024
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DOI: 10.1038/s41586-024-07560-4

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