High-performance 4-nm-resolution X-ray tomography using burst ptychography

Tomas Aidukas (), Nicholas W. Phillips, Ana Diaz, Emiliya Poghosyan, Elisabeth Müller, A. F. J. Levi, Gabriel Aeppli, Manuel Guizar-Sicairos and Mirko Holler ()
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Tomas Aidukas: Paul Scherrer Institute
Nicholas W. Phillips: Paul Scherrer Institute
Ana Diaz: Paul Scherrer Institute
Emiliya Poghosyan: Paul Scherrer Institute
Elisabeth Müller: Paul Scherrer Institute
A. F. J. Levi: University of Southern California
Gabriel Aeppli: Paul Scherrer Institute
Manuel Guizar-Sicairos: Paul Scherrer Institute
Mirko Holler: Paul Scherrer Institute
Authors registered in the RePEc Author Service: Elisabeth Mueller

Nature, 2024, vol. 632, issue 8023, 81-88

Abstract: Abstract Advances in science, medicine and engineering rely on breakthroughs in imaging, particularly for obtaining multiscale, three-dimensional information from functional systems such as integrated circuits or mammalian brains. Achieving this goal often requires combining electron- and photon-based approaches. Whereas electron microscopy provides nanometre resolution through serial, destructive imaging of surface layers1, ptychographic X-ray computed tomography2 offers non-destructive imaging and has recently achieved resolutions down to seven nanometres for a small volume3. Here we implement burst ptychography, which overcomes experimental instabilities and enables much higher performance, with 4-nanometre resolution at a 170-times faster acquisition rate, namely, 14,000 resolution elements per second. Another key innovation is tomographic back-propagation reconstruction4, allowing us to image samples up to ten times larger than the conventional depth of field. By combining the two innovations, we successfully imaged a state-of-the-art (seven-nanometre node) commercial integrated circuit, featuring nanostructures made of low- and high-density materials such as silicon and metals, which offer good radiation stability and contrast at the selected X-ray wavelength. These capabilities enabled a detailed study of the chip’s design and manufacturing, down to the level of individual transistors. We anticipate that the combination of nanometre resolution and higher X-ray flux at next-generation X-ray sources will have a revolutionary impact in fields ranging from electronics to electrochemistry and neuroscience.

Date: 2024
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DOI: 10.1038/s41586-024-07615-6

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