Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Daobing Zeng, Ziyang Zhang, Zhongying Xue, Miao Zhang, Paul K. Chu, Yongfeng Mei, Ziao Tian () and Zengfeng Di ()
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Daobing Zeng: Chinese Academy of Sciences
Ziyang Zhang: Chinese Academy of Sciences
Zhongying Xue: Chinese Academy of Sciences
Miao Zhang: Chinese Academy of Sciences
Paul K. Chu: City University of Hong Kong
Yongfeng Mei: Fudan University
Ziao Tian: Chinese Academy of Sciences
Zengfeng Di: Chinese Academy of Sciences

Nature, 2024, vol. 632, issue 8026, 788-794

Abstract: Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors1–4. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties3,5,6. Here we demonstrate the fabrication of atomically thin single-crystalline Al2O3 (c-Al2O3) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al2O3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at room temperature. Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al2O3 meet the International Roadmap for Devices and Systems requirements3,5,7. Through a one-step transfer process consisting of the source, drain, dielectric materials and gate, we achieve top-gate MoS2 FETs characterized by a steep subthreshold swing of 61 mV dec−1, high on/off current ratio of 108 and very small hysteresis of 10 mV. This technique and material demonstrate the possibility of producing high-quality single-crystalline oxides suitable for integration into fully scalable advanced 2D FETs, including negative capacitance transistors and spin transistors.

Date: 2024
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DOI: 10.1038/s41586-024-07786-2

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