Using both faces of polar semiconductor wafers for functional devices

Len van Deurzen (), Eungkyun Kim, Naomi Pieczulewski, Zexuan Zhang, Anna Feduniewicz-Zmuda, Mikolaj Chlipala, Marcin Siekacz, David Muller, Huili Grace Xing, Debdeep Jena and Henryk Turski
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Len van Deurzen: Cornell University
Eungkyun Kim: Cornell University
Naomi Pieczulewski: Cornell University
Zexuan Zhang: Cornell University
Anna Feduniewicz-Zmuda: Polish Academy of Sciences
Mikolaj Chlipala: Polish Academy of Sciences
Marcin Siekacz: Polish Academy of Sciences
David Muller: Cornell University
Huili Grace Xing: Cornell University
Debdeep Jena: Cornell University
Henryk Turski: Cornell University

Nature, 2024, vol. 634, issue 8033, 334-340

Abstract: Abstract Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide-bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along a unique crystal axis1. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis substantially different in their physical and chemical properties2. In the past three decades, the cation (gallium) face of GaN has been used for photonic devices such as light-emitting diodes (LEDs) and lasers3–5. Although the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high-electron-mobility transistors (HEMTs) owing to favourable polarization discontinuities6. In this work, we introduce dualtronics, showing that it is possible to make photonic devices on the cation face and electronic devices on the anion face of the same semiconductor wafer. This opens the possibility for making use of both faces of polar semiconductors in a single structure, in which electronic, photonic and acoustic properties can be implemented on opposite faces of the same wafer, markedly enhancing the functional capabilities of this revolutionary semiconductor family.

Date: 2024
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DOI: 10.1038/s41586-024-07983-z

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