Efficient green InP-based QD-LED by controlling electron injection and leakage

Yangyang Bian, Xiaohan Yan, Fei Chen (), Qian Li, Bo Li, Wenjun Hou, Zizhe Lu, Shuaibing Wang, Han Zhang, Wenjing Zhang, Dandan Zhang, Aiwei Tang (), Fengjia Fan () and Huaibin Shen ()
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Yangyang Bian: Henan University
Xiaohan Yan: University of Science and Technology of China
Fei Chen: Henan University
Qian Li: Henan University
Bo Li: University of Science and Technology of China
Wenjun Hou: TCL Corporate Research
Zizhe Lu: TCL Corporate Research
Shuaibing Wang: Beijing Jiaotong University
Han Zhang: Henan University
Wenjing Zhang: Henan University
Dandan Zhang: Henan University
Aiwei Tang: Beijing Jiaotong University
Fengjia Fan: University of Science and Technology of China
Huaibin Shen: Henan University

Nature, 2024, vol. 635, issue 8040, 854-859

Abstract: Abstract Green indium phosphide (InP)-based quantum dot light-emitting diodes (QD-LEDs) still suffer from low efficiency and short operational lifetime, posing a critical challenge to fully cadmium-free QD-LED displays and lighting1–3. Unfortunately, the factors that underlie these limitations remain unclear and, therefore, no clear device-engineering guidelines are available. Here, by using electrically excited transient absorption spectroscopy, we find that the low efficiency of state-of-the-art green cadmium-free QD-LEDs (which ubiquitously adopt the InP–ZnSeS–ZnS core–shell–shell structure) originates from the ZnSeS interlayer because it imposes a high injection barrier that limits the electron concentration and trap saturation. We demonstrate, both experimentally and theoretically, that replacing the currently widely used ZnSeS interlayer with a thickened ZnSe interlayer enables improved electron injection and depressed leakage simultaneously, allowing to achieve a peak external quantum efficiency of 26.68% and T95 lifetime (time for the luminance to drop to 95% of the initial value) of 1,241 h at an initial brightness of 1,000 cd m–2 in green InP-based QD-LEDs emitting at 543 nm—exceeding the previous best values by a factor of 1.6 and 165, respectively3,4.

Date: 2024
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DOI: 10.1038/s41586-024-08197-z

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