Growth-based monolithic 3D integration of single-crystal 2D semiconductors

Ki Seok Kim, Seunghwan Seo, Junyoung Kwon, Doyoon Lee, Changhyun Kim, Jung-El Ryu, Jekyung Kim, Jun Min Suh, Hang-Gyo Jung, Youhwan Jo, June-Chul Shin, Min-Kyu Song, Jin Feng, Hogeun Ahn, Sangho Lee, Kyeongjae Cho, Jongwook Jeon, Minsu Seol (), Jin-Hong Park (), Sang Won Kim () and Jeehwan Kim ()
Additional contact information
Ki Seok Kim: Massachusetts Institute of Technology
Seunghwan Seo: Massachusetts Institute of Technology
Junyoung Kwon: Samsung Advanced Institute of Technology
Doyoon Lee: Massachusetts Institute of Technology
Changhyun Kim: Samsung Advanced Institute of Technology
Jung-El Ryu: Massachusetts Institute of Technology
Jekyung Kim: Massachusetts Institute of Technology
Jun Min Suh: Massachusetts Institute of Technology
Hang-Gyo Jung: Department of Electrical and Computer Engineering Sungkyunkwan University
Youhwan Jo: The University of Texas at Dallas
June-Chul Shin: Massachusetts Institute of Technology
Min-Kyu Song: Massachusetts Institute of Technology
Jin Feng: Massachusetts Institute of Technology
Hogeun Ahn: Department of Electrical and Computer Engineering Sungkyunkwan University
Sangho Lee: Massachusetts Institute of Technology
Kyeongjae Cho: The University of Texas at Dallas
Jongwook Jeon: Department of Electrical and Computer Engineering Sungkyunkwan University
Minsu Seol: Samsung Advanced Institute of Technology
Jin-Hong Park: Department of Electrical and Computer Engineering Sungkyunkwan University
Sang Won Kim: Samsung Advanced Institute of Technology
Jeehwan Kim: Massachusetts Institute of Technology

Nature, 2024, vol. 636, issue 8043, 615-621

Abstract: Abstract The demand for the three-dimensional (3D) integration of electronic components is steadily increasing. Despite substantial processing challenges, the through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format1,2. Although monolithic 3D (M3D) integration schemes show promise3, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. This challenge arises from the inherent difficulty of growing single crystals on amorphous or polycrystalline surfaces after the back-end-of-the-line process at low temperatures to preserve the underlying circuitry. Consequently, a practical growth-based solution for M3D of single crystals remains unknown. Here we present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures low enough to preserve the underlying electronic components. Building on this developed technique, we demonstrate the seamless monolithic integration of vertical single-crystalline logic transistor arrays. This accomplishment leads to the development of unprecedented vertical complementary metal oxide semiconductor (CMOS) arrays composed of grown single-crystalline channels. Ultimately, this achievement provides opportunities for M3D integration of various electronic hardware in the form of single crystals.

Date: 2024
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41586-024-08236-9 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:636:y:2024:i:8043:d:10.1038_s41586-024-08236-9

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/s41586-024-08236-9

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().