GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

Yannick Koninck, Charles Caer (), Didit Yudistira (), Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Cenk Ibrahim Özdemir, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci, Alexey Milenin, Andualem Ali Yimam, Geert Morthier, Dries Thourhout, Peter Verheyen, Marianna Pantouvaki, Bernardette Kunert () and Joris Campenhout ()
Additional contact information
Yannick Koninck: imec
Charles Caer: imec
Didit Yudistira: imec
Marina Baryshnikova: imec
Huseyin Sar: imec
Ping-Yi Hsieh: imec
Cenk Ibrahim Özdemir: imec
Saroj Kanta Patra: imec
Nadezda Kuznetsova: imec
Davide Colucci: imec
Alexey Milenin: imec
Andualem Ali Yimam: Ghent University–imec
Geert Morthier: Ghent University–imec
Dries Thourhout: Ghent University–imec
Peter Verheyen: imec
Marianna Pantouvaki: imec
Bernardette Kunert: imec
Joris Campenhout: imec

Nature, 2025, vol. 637, issue 8044, 63-69

Abstract: Abstract Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world1–6. However, the lack of highly scalable, native complementary metal–oxide–semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III–V light sources on silicon7–12, monolithic integration by direct epitaxy of III–V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p–i–n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 °C. These results illustrate the potential of the III–V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.

Date: 2025
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DOI: 10.1038/s41586-024-08364-2

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