Polytype switching by super-lubricant van der Waals cavity arrays

Youngki Yeo, Yoav Sharaby, Nirmal Roy, Noam Raab, Kenji Watanabe, Takashi Taniguchi and Moshe Ben Shalom ()
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Youngki Yeo: Tel Aviv University
Yoav Sharaby: Tel Aviv University
Nirmal Roy: Tel Aviv University
Noam Raab: Tel Aviv University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Moshe Ben Shalom: Tel Aviv University

Nature, 2025, vol. 638, issue 8050, 389-393

Abstract: Abstract Expanding the performance of field-effect devices is a key challenge of the ever-growing chip industry at the core of current technologies1. Non-volatile multiferroic transistors that control atomic movements rather than purely electronic distribution are highly desired2. Recently, a field-effect control over structural transitions was achieved in commensurate stacking configurations of honeycomb van der Waals (vdW) polytypes by sliding boundary strips between oppositely polarized domains3–6. This ferroelectric hysteretic response, however, relied on pre-existing dislocation strips between relatively large micron-scale domains, severely limiting practical implementations3,7,8. Here we report the robust electric switching of single-domain polytypes in nanometre-scale islands embedded in super-lubricant vdW arrays. We etch cavities into a thin layered spacer and then encapsulate it with functional flakes. The flakes above/under the lattice-mismatched spacer sag and touch at each cavity to form islands of commensurate and metastable polytype configurations. By imaging the polarization of the polytypes, we observe nucleation and annihilation of boundary strips and geometry-adaptable ferroelectric hysteresis loops. Using mechanical stress, we further control the position of boundary strips, modify marginal twist angles and nucleate patterns of polar domain. This super-lubricant arrays of polytype (SLAP) concept suggests ‘slidetronics’ device applications such as elastic-coupled neuromorphic memory cells and non-volatile multiferroic tunnelling transistors and programmable response by designing the size, shape and symmetry of the islands and of the arrays9.

Date: 2025
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DOI: 10.1038/s41586-024-08380-2

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