Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides

Donghoon Moon, Wonsik Lee, Chaesung Lim, Jinwoo Kim, Jiwoo Kim, Yeonjoon Jung, Hyun-Young Choi, Won Seok Choi, Hangyel Kim, Ji-Hwan Baek, Changheon Kim, Jaewoong Joo, Hyun-Geun Oh, Hajung Jang, Kenji Watanabe, Takashi Taniguchi, Sukang Bae, Jangyup Son, Huije Ryu, Junyoung Kwon, Hyeonsik Cheong, Jeong Woo Han, Hyejin Jang and Gwan-Hyoung Lee ()
Additional contact information
Donghoon Moon: Seoul National University
Wonsik Lee: Seoul National University
Chaesung Lim: Seoul National University
Jinwoo Kim: Seoul National University
Jiwoo Kim: Seoul National University
Yeonjoon Jung: Seoul National University
Hyun-Young Choi: Seoul National University
Won Seok Choi: Seoul National University
Hangyel Kim: Seoul National University
Ji-Hwan Baek: Seoul National University
Changheon Kim: Seoul National University
Jaewoong Joo: Seoul National University
Hyun-Geun Oh: Seoul National University
Hajung Jang: Sogang University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Sukang Bae: Korea Institute of Science and Technology
Jangyup Son: Korea Institute of Science and Technology
Huije Ryu: Samsung Electronics
Junyoung Kwon: Samsung Electronics
Hyeonsik Cheong: Sogang University
Jeong Woo Han: Seoul National University
Hyejin Jang: Seoul National University
Gwan-Hyoung Lee: Seoul National University

Nature, 2025, vol. 638, issue 8052, 957-964

Abstract: Abstract Two-dimensional (2D) semiconductors, particularly transition metal dichalcogenides (TMDs), are promising for advanced electronics beyond silicon1–3. Traditionally, TMDs are epitaxially grown on crystalline substrates by chemical vapour deposition. However, this approach requires post-growth transfer to target substrates, which makes controlling thickness and scalability difficult. Here we introduce a method called hypotaxy (‘hypo’ meaning downward and ‘taxy’ meaning arrangement), which enables wafer-scale single-crystal TMD growth directly on various substrates, including amorphous and lattice-mismatched substrates, while preserving crystalline alignment with an overlying 2D template. By sulfurizing or selenizing a pre-deposited metal film under graphene, aligned TMD nuclei form, coalescing into a single-crystal film as graphene is removed. This method achieves precise MoS2 thickness control from monolayer to hundreds of layers on diverse substrates, producing 4-inch single-crystal MoS2 with high thermal conductivity (about 120 W m−1 K−1) and mobility (around 87 cm2 V−1 s−1). Furthermore, nanopores created in graphene using oxygen plasma treatment allow MoS2 growth at a lower temperature of 400 °C, compatible with back-end-of-line processes. This hypotaxy approach extends to other TMDs, such as MoSe2, WS2 and WSe2, offering a solution to substrate limitations in conventional epitaxy and enabling wafer-scale TMDs for monolithic three-dimensional integration.

Date: 2025
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DOI: 10.1038/s41586-024-08492-9

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