Homogeneous ZnSeTeS quantum dots for efficient and stable pure-blue LEDs

Qianqian Wu, Fan Cao, Wenke Yu, Sheng Wang, Wenjun Hou, Zizhe Lu, Weiran Cao, Jiaqi Zhang (), Xiaoyu Zhang, Yingguo Yang, Guohua Jia, Jianhua Zhang () and Xuyong Yang ()
Additional contact information
Qianqian Wu: Shanghai University
Fan Cao: Shanghai University
Wenke Yu: Shanghai University
Sheng Wang: Shanghai University
Wenjun Hou: TCL Research
Zizhe Lu: TCL Research
Weiran Cao: TCL Research
Jiaqi Zhang: Jilin University
Xiaoyu Zhang: Jilin University
Yingguo Yang: Chinese Academy of Sciences
Guohua Jia: Curtin University
Jianhua Zhang: Shanghai University
Xuyong Yang: Shanghai University

Nature, 2025, vol. 639, issue 8055, 633-638

Abstract: Abstract The electroluminescence performance of heavy-metal-free blue quantum dot (QD) light-emitting diodes (QLEDs) is much lower than that of state-of-the-art cadmium-based counterparts. Ecofriendly ZnSeTe QDs are an ideal alternative to cadmium-based blue QDs1,2, but face issues with colour impurity and inferior stability caused by the aggregated tellurium (Ten≥2) that dominates compositional inhomogeneity3,4. Here we developed an isoelectronic control strategy using congeneric sulfur coordinated with triphenyl phosphite (TPP-S) to construct homogeneous ZnSeTeS QDs with pure-blue emissions and near-unity photoluminescence quantum yield. TPP with low electron-donating capability promotes the reactivity balance among anionic precursors, favouring the growth of QDs with uniform composition. The acceptor-like S with high electronegativity weakens the hole localization of the Te atoms by interfering with their surrounding carriers, thereby suppressing the formation of Ten≥2 isoelectronic centres. Furthermore, the congeneric S increases the configurational entropy of the QDs and eliminates the stacking faults and oxygen defects, leading to improved structural stability and reduced non-radiative carrier density. Consequently, the resulting pure-blue QLEDs based on core–shell ZnSeTeS/ZnSe/ZnS QDs emitting at 460 nm show a high external quantum efficiency of 24.7%, a narrow linewidth of 17 nm, and long operational half-lifetime (T50) close to 30,000 hours at 100 cd cm−2, rivalling state-of-the-art cadmium-based blue QLEDs.

Date: 2025
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DOI: 10.1038/s41586-025-08645-4

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