Light-triggered regionally controlled n-doping of organic semiconductors

Xin-Yi Wang, Yi-Fan Ding, Xiao-Yan Zhang, Yang-Yang Zhou, Chen-Kai Pan, Yuan-He Li, Nai-Fu Liu, Ze-Fan Yao, Yong-Shi Chen, Zhi-Hao Xie, Yi-Fan Huang, Yu-Chun Xu, Hao-Tian Wu, Chun-Xi Huang, Miao Xiong, Li Ding, Zi-Di Yu, Qi-Yi Li, Yu-Qing Zheng, Jie-Yu Wang and Jian Pei ()
Additional contact information
Xin-Yi Wang: Peking University
Yi-Fan Ding: Peking University
Xiao-Yan Zhang: Peking University
Yang-Yang Zhou: Peking University
Chen-Kai Pan: Peking University
Yuan-He Li: Peking University
Nai-Fu Liu: Peking University
Ze-Fan Yao: Peking University
Yong-Shi Chen: Peking University
Zhi-Hao Xie: Peking University
Yi-Fan Huang: Peking University
Yu-Chun Xu: Peking University
Hao-Tian Wu: Peking University
Chun-Xi Huang: Peking University
Miao Xiong: Peking University
Li Ding: Peking University
Zi-Di Yu: Peking University
Qi-Yi Li: Peking University
Yu-Qing Zheng: Peking University
Jie-Yu Wang: Peking University
Jian Pei: Peking University

Nature, 2025, vol. 642, issue 8068, 599-604

Abstract: Abstract Doping is a primary method to modulate the electrical properties of semiconductors, enabling the fabrication of various homojunctions/heterojunctions and complex devices1–8. For organic semiconductors (OSCs), the electrical performance has been extensively improved by developing doping methods and dopants9–13. However, compared with the state-of-the-art spatial resolution of inorganic semiconductor fabrication processes, OSCs lag far behind, limiting the construction of complex organic electronic devices5. Here we present a facile light-triggered doping strategy and develop a series of inactive photoactivable dopants (iPADs) for regionally controlled n-doping of OSCs. By converting iPADs into active dopants through ultraviolet (UV) exposure, controllable doping of various n-type OSCs with high electrical conductivity greater than 30 S cm−1 has been realized. Using iPADs can substantially improve the performances of OSCs in transistors, logic circuits and thermoelectrics. Also, regionally controlled doping is demonstrated in OSCs with a record resolution down to 1 μm. Overall, our strategy has achieved tunable doping levels in OSCs with high spatial resolution, which is expected to be highly suited for integrated circuits in both roll-to-roll and laboratory-scale environments.

Date: 2025
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DOI: 10.1038/s41586-025-09075-y

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