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Weakly space-confined all-inorganic perovskites for light-emitting diodes

Chenchen Peng, Haitao Yao, Othman Ali, Wenjing Chen, Yingguo Yang, Zongming Huang, Hui Liu, Jianyu Li, Tao Chen, Zhijian Li, Mei Sun, Hongmin Zhou, Xiangru Tao, Nana Wang, Jianpu Wang and Zhengguo Xiao ()
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Chenchen Peng: University of Science and Technology of China
Haitao Yao: University of Science and Technology of China
Othman Ali: University of Science and Technology of China
Wenjing Chen: University of Science and Technology of China
Yingguo Yang: Fudan University
Zongming Huang: University of Science and Technology of China
Hui Liu: University of Science and Technology of China
Jianyu Li: University of Science and Technology of China
Tao Chen: University of Science and Technology of China
Zhijian Li: University of Science and Technology of China
Mei Sun: University of Science and Technology of China
Hongmin Zhou: University of Science and Technology of China
Xiangru Tao: Nanjing Tech University (NanjingTech)
Nana Wang: Nanjing Tech University (NanjingTech)
Jianpu Wang: Nanjing Tech University (NanjingTech)
Zhengguo Xiao: University of Science and Technology of China

Nature, 2025, vol. 643, issue 8070, 96-103

Abstract: Abstract Metal halide perovskites are promising materials for light-emitting diodes (LEDs)1–4. Spatially confining charge carriers using nanocrystal/quantum dots5–9, low-dimensional perovskites10–13 and ultrathin perovskite layers14 have all been used to improve the external quantum efficiency of perovskite LEDs (PeLEDs). However, most strongly space-confined perovskites suffer from severe Auger recombination, ion migration and thermal instability, resulting in limited brightness and operational lifetime6,7,10–12,14–17. Here, we report an alternative strategy based on weakly space-confined, large-grained crystals of all-inorganic perovskite. Sacrificial additives, namely, hypophosphorous acid and ammonium chloride, were used to induce nucleation and crystallization of caesium lead bromide, resulting in monocrystal grains with minimized trap density and a high photoluminescence quantum yield. Benefiting from the high carrier mobility and suppressed Auger recombination, we obtained efficient PeLEDs with an external quantum efficiency reaching 22.0%, which remained above 20% at a high current density near 1,000 mA cm−2 and a brightness of over 1,167,000 cd m−2. Furthermore, benefiting from the suppressed ion migration and better thermal stability, the extrapolated half-lifetime of the weakly space-confined PeLEDs increased to 185,600 h under an initial luminance of 100 cd m−2 at room temperature. Our work is a new approach for designing efficient, bright and stable PeLEDs for real applications.

Date: 2025
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DOI: 10.1038/s41586-025-09137-1

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