Long-distance remote epitaxy

Ru Jia, Yan Xin, Mark Potter, Jie Jiang, Zixu Wang, Hanxue Ma, Zhihao Zhang, Zhizhuo Liang, Lifu Zhang, Zonghuan Lu, Ruizhe Yang, Saloni Pendse, Yang Hu, Kai Peng, Yilin Meng, Wei Bao, Jun Liu, Gwo-Ching Wang, Toh-Ming Lu, Yunfeng Shi (), Hanwei Gao () and Jian Shi ()
Additional contact information
Ru Jia: Rensselaer Polytechnic Institute
Yan Xin: Florida State University
Mark Potter: Rensselaer Polytechnic Institute
Jie Jiang: Rensselaer Polytechnic Institute
Zixu Wang: Rensselaer Polytechnic Institute
Hanxue Ma: Rensselaer Polytechnic Institute
Zhihao Zhang: Rensselaer Polytechnic Institute
Zhizhuo Liang: Rensselaer Polytechnic Institute
Lifu Zhang: Rensselaer Polytechnic Institute
Zonghuan Lu: Applied Physics and Astronomy
Ruizhe Yang: The State University of New York at Buffalo
Saloni Pendse: Rensselaer Polytechnic Institute
Yang Hu: Rensselaer Polytechnic Institute
Kai Peng: Rensselaer Polytechnic Institute
Yilin Meng: Rensselaer Polytechnic Institute
Wei Bao: Rensselaer Polytechnic Institute
Jun Liu: The State University of New York at Buffalo
Gwo-Ching Wang: Applied Physics and Astronomy
Toh-Ming Lu: Applied Physics and Astronomy
Yunfeng Shi: Rensselaer Polytechnic Institute
Hanwei Gao: Florida State University
Jian Shi: Rensselaer Polytechnic Institute

Nature, 2025, vol. 646, issue 8085, 584-591

Abstract: Abstract Remote epitaxy, in which an epitaxial relation is established between a film and a substrate through remote interactions, enables the development of high-quality single crystalline epilayers and their transfer to and integration with other technologically crucial substates1,2. It is commonly believed that in remote epitaxy, the distance within which the remote interaction can play a leading part in the epitaxial process is less than 1 nm, as the atomically resolved fluctuating electric potential decays very rapidly to a negligible value after a few atomic distances3. Here we show that it is possible to achieve remote epitaxy when the epilayer–substrate distance is as large as 2–7 nm. We experimentally demonstrate long-distance remote epitaxy of CsPbBr3 film on an NaCl substrate, KCl film on a KCl substrate and ZnO microrods on GaN, and show that a dislocation in the GaN substrate exists immediately below every remotely epitaxial ZnO microrod. These findings indicate that remote epitaxy could be designed and engineered by means of harnessing defect-mediated long-distance remote interactions.

Date: 2025
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DOI: 10.1038/s41586-025-09484-z

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