Second-Order Approach to Optimal Semiconductor Design

M. Hinze () and R. Pinnau ()
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M. Hinze: Universität Hamburg
R. Pinnau: Technische Universität Kaiserslautern

Journal of Optimization Theory and Applications, 2007, vol. 133, issue 2, No 4, 179-199

Abstract: Abstract Second order methods for optimal semiconductor design based on the standard drift diffusion model are developed. Second–order necessary and sufficient conditions are established. Local quadratic convergence for the Newton method is proved. Numerical results for an unsymmetric (n–p) diode are presented.

Keywords: Semiconductor design; Drift diffusion; Optimal control; Second–order necessary and sufficient conditions; KKT systems; Newton method; Numerical techniques (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1007/s10957-007-9203-3

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