Optimal Control of a Chemical Vapor Deposition Reactor

A. Friedman and B. Hu
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A. Friedman: University of Minnesota
B. Hu: University of Notre Dame

Journal of Optimization Theory and Applications, 1998, vol. 97, issue 3, No 6, 623-644

Abstract: Abstract We study a simple model of chemical vapor deposition on a silicon wafer. The control is the flux of chemical species, and the objective is to grow the semiconductor film so that its surface attains a prescribed profile as nearly as possible. The surface is spatially fast oscillating due to the small feature scale, and therefore the problem is formulated in terms of its homogenized approximation. We prove that the optimal control is bang-bang, and we use this information to develop a numerical scheme for computing the optimal control.

Keywords: Optimal control; bang-bang control; free boundary problems; parabolic equations; homogenizations; optimality conditions (search for similar items in EconPapers)
Date: 1998
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Citations: View citations in EconPapers (1)

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DOI: 10.1023/A:1022694210246

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