Computer Simulation of Energy Relaxation and Recombination of Nonequilibrium Electrons in a Disordered System with Localized Electronic States

S.D. Baranovskii, E.I. Levin, I.M. Ruzin, H. Fritzsche and B.I. Shklovskii
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S.D. Baranovskii: A.F. Ioffe Physico-Technical Institute, 194021 Leningrad, USSR
E.I. Levin: A.F. Ioffe Physico-Technical Institute, 194021 Leningrad, USSR
I.M. Ruzin: A.F. Ioffe Physico-Technical Institute, 194021 Leningrad, USSR
H. Fritzsche: Univ. of Chicago, James Franck Institute, Chicago Ill. 60637, USA
B.I. Shklovskii: Univ. of Minnesota, Theor. Phys. Inst., Minneapolis Minn. 55455, USA

International Journal of Modern Physics C (IJMPC), 1991, vol. 02, issue 01, 220-222

Abstract: A new exact algorithm is developed for the simulation of simultaneous diffusion and recombination of nonequilibrium electrons. It is shown that the diffusion process is non-Markovian, and the exact value of the critical index s is found. The solution of the universal geometrical problem is used to describe many phenomena in disordered systems, such as photoconductivity, photoluminescence etc. The results coincide well with the experimental observations.

Date: 1991
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DOI: 10.1142/S0129183191000202

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