Electron States in Static Disordered Systems and Fluid Systems

L. Cruzeiro-Hansson, J.O. Baum and J.L. Finney
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L. Cruzeiro-Hansson: Dept. Crystallography, Birkbeck College, Malet St., London WC1E 7HX, U.K.
J.O. Baum: Rutherford Appleton Lab, Chilton, Didcot, Oxfordshire OX11 0QX, U.K.
J.L. Finney: Rutherford Appleton Lab, Chilton, Didcot, Oxfordshire OX11 0QX, U.K.

International Journal of Modern Physics C (IJMPC), 1991, vol. 02, issue 01, 305-309

Abstract: The path integral formulation of quantum statistical mechanics is used to study the effect of structural disorder on the electron states at finite temperatures. The following systems are investigated: an excess electron in a) a perfect hard spheres crystal, b) a hard spheres crystal with a vacancy and c) a hard spheres fluid. The localizing effect of a vacancy on the electron equals that of a fluid environment.

Keywords: 0530 (search for similar items in EconPapers)
Date: 1991
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DOI: 10.1142/S012918319100038X

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