Simulation of Phosphorus Implantation into Silicon with a Single Parameter Electronic Stopping Power Model

David Cai, Charles M. Snell, Keith M. Beardmore and Niels Grønbech-Jensen
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David Cai: Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
Charles M. Snell: Applied Theoretical and Computational Physics Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
Keith M. Beardmore: Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
Niels Grønbech-Jensen: Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA

International Journal of Modern Physics C (IJMPC), 1998, vol. 09, issue 03, 459-470

Abstract: We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge$Z_{1}^{*}$, and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius$r_{s}^{0}$which controls$Z_{1}^{*}$. By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.

Keywords: Modeling Ion Implantation; Silicon; Binary Collision; Molecular Dynamics; Electronic Stopping (search for similar items in EconPapers)
Date: 1998
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DOI: 10.1142/S0129183198000352

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