MONTE CARLO SIMULATIONS OF DOPED, DILUTED MAGNETIC SEMICONDUCTORS — A SYSTEM WITH TWO LENGTH SCALES

R. N. Bhatt () and Xin Wan ()
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R. N. Bhatt: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Xin Wan: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

International Journal of Modern Physics C (IJMPC), 1999, vol. 10, issue 08, 1459-1470

Abstract: We describe a Monte Carlo simulation study of the magnetic phase diagram of diluted magnetic semiconductors doped with shallow impurities in the low concentration regime. We show that because of a wide distribution of interaction strengths, the system exhibits strong quantum effects in the magnetically ordered phase. A discrete spin model, found to closely approximate the quantum system, shows long relaxation times, and the need for specialized cluster algorithms for updating spin configurations. Results for a representative system are presented.

Keywords: Monte Carlo simulation; Diluted magnetic semiconductors; Shallow impurity; Phase transition; Cluster algorithm (search for similar items in EconPapers)
Date: 1999
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DOI: 10.1142/S0129183199001248

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