A SIMPLE SOLID-ON-SOLID MODEL OF EPITAXIAL FILM GROWTH: SUBMONOLAYER SUBSTRATE COVERAGE

K. Malarz ()
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K. Malarz: Department of Theoretical and Computational Physics, Faculty of Physics and Nuclear Techniques, University of Mining and Metallurgy (AGH), al. Mickiewicza 30, PL-30059, Kraków, Poland

International Journal of Modern Physics C (IJMPC), 2000, vol. 11, issue 08, 1561-1566

Abstract: In this work, we investigate the influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also, anisotropy in the growth is involved. We found from computer simulations for the simple cubic lattice and solid-on-solid model that the surface morphology changes with increasing temperature from isotropically distributed isolated small islands through anisotropic 1D stripes to larger 2D anisotropic islands and again randomly distributed single atoms. The transition is also marked in height–height correlation function dependence on temperature as directly seen by snapshots from simulations. The results are in good qualitative agreement with already published results of kinetic Monte Carlo simulations as well as with some experimental data.

Keywords: Anisotropy; Computer Simulation; Epitaxy; Growth; Surface Structure; Morphology; Roughness and Topography (search for similar items in EconPapers)
Date: 2000
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DOI: 10.1142/S0129183100001449

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