GOLD DEPOSITION ON GaAs(001) SURFACES: MOLECULAR-DYNAMICS SIMULATIONS

Şakir Erkoç (), Lynda Amirouche and Leila Rouaiguia
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Şakir Erkoç: Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
Lynda Amirouche: Theoretical Physics Laboratory, Faculty of Physical Sciences, U.S.T.H.B., P. B. No: 32, El–Alia, Bab Ezzouar, Alger, Algeria
Leila Rouaiguia: Theoretical Physics Laboratory, Faculty of Physical Sciences, U.S.T.H.B., P. B. No: 32, El–Alia, Bab Ezzouar, Alger, Algeria

International Journal of Modern Physics C (IJMPC), 2002, vol. 13, issue 06, 759-769

Abstract: We have simulated the gold deposition on arsenic and gallium terminated GaAs(001) surfaces at low and room temperatures. It has been found that gallium terminated surface is relatively less stable in comparison to the arsenic terminated surface. On the other hand, a single gold adatom on the surface has different characteristics than full coverage gold atoms on the surface; a single gold atom diffuses into the surface at room temperature. Simulations have been performed by considering classical molecular-dynamics technique using an empirical many-body potential energy function comprising two- and three-body atomic interactions.

Keywords: GaAs(001) surfaces; molecular-dynamics; empirical potentials (search for similar items in EconPapers)
Date: 2002
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DOI: 10.1142/S0129183102003498

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