REFINED SIMULATION FOR THE DIFFUSION IN SiviaCHANDRASEKHAR HOPPING

S. D. D. Roy () and K. Ramachandran ()
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S. D. D. Roy: School of Physics, Madurai Kamaraj University, Madurai-625 021, India
K. Ramachandran: School of Physics, Madurai Kamaraj University, Madurai-625 021, India

International Journal of Modern Physics C (IJMPC), 2002, vol. 13, issue 07, 881-892

Abstract: The method employed by Chandrasekhar for the astronomical bodies is brought down here to study the diffusion in Silicon. A continuous position probability density for the diffusing particle,ω(r, t)representing the position of the diffusing particle at any timet, is used in the evaluation of the diffusion constant. The results agree reasonably well with the available experimental and theoretically reported values. The existence of "traps" in the semiconducting systems has been clearly brought out by this simulation technique.

Keywords: Diffusion; simulation; Chandrasekhar-hopping; absorbing end; reflecting end; traps (search for similar items in EconPapers)
Date: 2002
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DOI: 10.1142/S0129183102004583

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