BANDGAP NARROWING IN NANO-WIRES

Kourosh Nozari () and Mahyar Madadi ()
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Kourosh Nozari: Department of Physics, Faculty of Basic Sciences, University of Mazandaran, P. O. Box, 47416-1467, Babolsar, Iran
Mahyar Madadi: Department of Physics, Faculty of Basic Sciences, University of Mazandaran, P. O. Box, 47416-1467, Babolsar, Iran

International Journal of Modern Physics C (IJMPC), 2006, vol. 17, issue 02, 167-185

Abstract: In this paper we consider two different geometry of quasi one-dimensional semiconductors and calculate their exchange-correlation induced bandgap renormalization (BGR) as a function of the electron-hole plasma density and quantum wire width. Based on different fabrication scheme, we define suitable external confinement potential and then leading-order GW dynamical screening approximation is used in the calculation by treating electron–electron Coulomb interaction and electron-optical phonon interaction. Using a numerical scheme, screened Coulomb potential, probability of different states, profile of charge density and the values of the renormalized gap energy are calculated and the effects of variation of confinement potential width and temperature are studied.

Keywords: Nano-structures; quantum wires; bandgap renormalization; V-shaped and T-shaped confinement potentials; 73.20.Dx; 71.35.Ee; 71.45.Gm (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0129183106009102

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