THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

Bin Yang, Jie Zhang, Yong-Fang Zhao () and Xiao-Gong Jing
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Bin Yang: Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China
Jie Zhang: Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China
Yong-Fang Zhao: Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China
Xiao-Gong Jing: Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China

International Journal of Modern Physics C (IJMPC), 2006, vol. 17, issue 04, 561-570

Abstract: TheI-Vcurves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation.Al0.5Ga0.5As/GaAsdouble-barrier quantum well,Al0.29Ga0.71As/GaAsmulti-quantum well, andAlSb/InAsdouble-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy onI-Vcharacteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulatedI-Vcurves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

Keywords: Multi-quantum well; resonant tunneling; transmission coefficient; I-Vcharacteristic curve; negative differential resistance effect (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0129183106008686

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