TIGHT-BINDING METHOD FOR QUANTUM-CONFINEMENT ENERGY CALCULATIONS IN THECdSe/ZnSeMULTIPLE QUANTUM WELLS

Nacir Tit () and Ihab M. Obaidat
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Nacir Tit: The Abdus Salam International Center for Theoretical Physics, Strada Costiera 11, I-34100 Trieste, Italy;
Ihab M. Obaidat: The Physics Department, UAE University, P. O. Box 17551, Al-Ain, United Arab Emirates

International Journal of Modern Physics C (IJMPC), 2008, vol. 19, issue 11, 1635-1645

Abstract: We present an efficient method to calculate the quantum-confinement energy of charge carriers in the(ZnSe)M(CdSe)N(001)multiple quantum wells (MQW). The method is based on the 3D empiricalsp3s*tight-binding models, which include the spin-orbit coupling. The method can handle large systems while it takes account of the band mixing caused by the strain and confinement. In these perspectives, it proves itself more reliable than the traditional effective-mass approach (EMA) by further generating more relevant information about the quantum states localized within the wells; in particular, the number of bound states and their energy levels and their corresponding wavefunctions were obtained based on more realistic physical models. The quantum-confinement energy, bandgap energy, and band structures are studied versus theCdSewell width(N). The results are found to be comparable with those experimentally obtained using photoluminescence.

Keywords: Semiconductor compounds; II–VI semiconductors; quantum wells; 71.55.Jv; 71.25.Mg; 71.20.-b; 71.50.+t; 73.20.Fz (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0129183108013175

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